Optical and other physical characteristics of amorphous Se-Te-Sn alloys

被引:11
作者
Abdelazim, Nema M. [1 ,2 ]
Dabban, M. A. [3 ]
Abdel-Rahim, M. A. [2 ]
Abu-Sehly, A. A. [2 ]
机构
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[2] Assiut Univ, Fac Sci, Dept Phys, Assiut 71516, Egypt
[3] Aden Univ, Fac Educ, Dept Phys, Lodar, Yemen
关键词
Chalcogenide glasses; Lone pair electron; X-ray diffraction (XRD); Scanning electron microscope (SEM); BAND-GAP; CRYSTALLIZATION KINETICS; ELECTRICAL-PROPERTIES; DEPENDENCE; FILMS; TEMPERATURE; PARAMETERS; CONDUCTION; CONSTANTS;
D O I
10.1016/j.mssp.2015.05.005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Effect of Sn addition in the structural and optical properties of Se-Te chalcogenide alloy at the expense of the Se content has been studied. Stoichiometric bulk ingot materials of the Se90-xTe10Snx (x=0, 2.5, 5 and 7.5 at%) were prepared by a melt-quench technique. X-ray diffraction (XRD) studies indicated that the investigated alloys confirmed its amorphous nature. These results were confirmed by scanning electron microscopy (SEM) investigations and correlated to the rigidity percolation threshold of the lattice. Stoichiometric thermally evaporated thin film of the obtained compositions were carefully characterized to establish the interdependence between their chemical composition and some physical parameters, such as the average heat of atomization (H-s, the cohesive energy CE, the average coordination number < Z > and the optical band gap (E-g). It has been found that all the parameters varied linearly when Sn content was increased. The variation in the optical band gap (E-g) with Sn addition was discussed in terms of the width of localized states (E-e) and a chemical bond approach model (CBA). (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:156 / 161
页数:6
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