Characteristic red photoluminescence band in oxygen-deficient silica glass

被引:43
作者
Sakurai, Y
Nagasawa, K
Nishikawa, H
Ohki, Y
机构
[1] Shonan Inst Technol, Dept Elect Engn, Kanagawa 2518511, Japan
[2] Tokyo Metropolitan Univ, Dept Elect Engn, Tokyo 1920397, Japan
[3] Waseda Univ, Dept Elect Elect & Comp Engn, Shinjuku Ku, Tokyo 169, Japan
关键词
D O I
10.1063/1.370740
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied a red photoluminescence (PL) band at about 1.8 eV with full width at half maximum of 0.2-0.4 eV in a series of oxygen deficient-type silicas before and after gamma irradiation. The decay lifetime of the PL was estimated to be about 200 ns. The PL excitation peak was found to be located at 2.1 eV. The intensity of the 1.8 eV band was enhanced by about 100 times after gamma irradiation up to a dose of 10 MGy. These results suggest that the 1.8 eV PL is associated with oxygen deficient states in silica glass, which were introduced during manufacture and were enhanced further by the gamma irradiation. Comparison of the PL properties was made with other luminescent Si-based materials in terms of the peak energy, lifetime, and temperature dependence. (C) 1999 American Institute of Physics. [S0021-8979(99)08013-5].
引用
收藏
页码:370 / 373
页数:4
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