Pressure-Induced Metallization of Molecular Crystal BI3

被引：1

作者：

Onoda, Suzue ^{[1
]}

Shimizu, Katsuya ^{[1
]}

机构：

[1] Osaka Univ, Ctr Quantum Sci & Technol Extreme Condit, KYOKUGEN, Toyonaka, Osaka 5608531, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2007年 / 76卷

关键词：

high pressure; metallization; molecular crystal; molecular dissociation;

D O I：

10.1143/JPSJS.76SA.33

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have measured the electrical resistivity up to 26 GPa to investigate the pressure-induced metallization of BI3. At room temperature, the resistivity decreased rapidly with applying pressure. The pressure dependence of the electrical resistance indicated metallization of BI3 above 16 GPa. We found that the metallization in BI3 occurs at higher pressure than that of molecular dissociation reported by our previous X-ray diffraction measurements.

引用

页码：33 / 34

页数：2

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