Effect of defect configuration on the localization of phonons in two-dimensional phononic crystals

被引：32

作者：

He, Yun ^{[1
,2
]}

Wu, Fugen ^{[1
]}

Yao, Yuanwei ^{[2
]}

Zhang, Xin ^{[2
]}

Mu, Zhongfei ^{[1
]}

Yan, Shuya ^{[1
,2
]}

Cheng, Cong ^{[1
,2
]}

机构：

[1] Guangdong Univ Technol, Dept Expt Educ, Guangzhou 510006, Guangdong, Peoples R China

[2] Guangdong Univ Technol, Sch Phys & Optoelect Engn, Guangzhou 510006, Guangdong, Peoples R China

来源：

PHYSICS LETTERS A | 2013年 / 377卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Phononic crystal; Defect state; Band gap; Configuration; BAND-GAP; STATES; WAVES;

D O I：

10.1016/j.physleta.2013.02.001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Effects of defect location on the defect frequency and the localization of phonons are investigated in two novel kinds of model, created by moving the location of the native cylinder and inserting an ad-cylinder in the central cellular respectively. The results show that the defect frequency in Model 1 is only related to the distance, while in Model 2, is related not only to the distance, but also to the moving direction. From the pressure distribution, obvious localization phenomenon is found. The position and shape of the localized energy are varied with the position of the defect. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：889 / 894

页数：6

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