Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs

被引：7

作者：

Liou, JJ ^{[1
]}

Shireen, R

Ortiz-Conde, A

Sanchez, FJG

Cerdeira, A

Gao, X

Zou, XC

Ho, CS

机构：

[1] Univ Cent Florida, Dept Elect & Comp Engn, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA

[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

[3] Univ Simon Bolivar, LEES, Caracas 1080A, Venezuela

[4] CINVESTAV, IPN, Dept Ingn Electr, SEES, Mexico City 07300, DF, Mexico

[5] ProMOS Technol Inc, R&D Div, Hsinchu, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 03期

关键词：

D O I：

10.1016/S0026-2714(01)00259-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion implantation. followed by annealing process, often leads to nonuniform doping and considerable depletion effect in the polysilicon gate of submicron MOS devices. Such an effect can alter notably the subthreshold characteristics and invalidate the conventional subthreshold current model. This paper studies the polysilicon-gate depletion effects on the subthreshold behavior based on results obtained from two-dimensional device simulation. An empirical expression is also suggested to describe the subthreshold current including the depletion effect. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：343 / 347

页数：5

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