Ambipolar/unipolar conversion in graphene transistors by surface doping

被引：6

作者：

Feng, Tingting ^{[1
]}

Xie, Dan ^{[1
]}

Zhao, Haiming ^{[1
]}

Li, Gang ^{[1
]}

Xu, Jianlong ^{[1
]}

Ren, Tianling ^{[1
]}

Zhu, Hongwei ^{[2
,3
]}

机构：

[1] Tsinghua Univ, TNList, Inst Microelect, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China

[3] Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 19期

基金：

中国国家自然科学基金;

关键词：

SINGLE-LAYER GRAPHENE; TRANSPORT; MOLECULES; FILMS; SIO2;

D O I：

10.1063/1.4827879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ambipolar/unipolar conversion of conduction polarity in bottom-gate graphene field-effect transistor (FET) was realized by intended/unintended surface doping. Exposing the graphene FET in air made it fully p-type while covering graphene with Al nanofilm or poly(ethylene imine) (PEI) layer yielded a recovery of ambipolar conduction. The alteration of the conduction polarity in graphene FET was due to hole or electron-doping effect on graphene. Distinct changes in carrier mobility and current-voltage relationship were discussed between graphene with Al and PEI doping, and the dielectric screening by PEI was proposed as the possible mechanism. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 28 条

[1] Scattering mechanisms and Boltzmann transport in graphene [J].

Adam, Shaffique ;

Hwang, E. H. ;

Das Sarma, S. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (05) :1022-1025

[2] A self-consistent theory for graphene transport [J].

Adam, Shaffique ;

Hwang, E. H. ;

Galitski, V. M. ;

Das Sarma, S. .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397

[3]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[4] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[5] Single step, complementary doping of graphene [J].

Brenner, Kevin ;

Murali, Raghunath .

APPLIED PHYSICS LETTERS, 2010, 96 (06)

[6] Intrinsic and extrinsic performance limits of graphene devices on SiO2 [J].

Chen, Jian-Hao ;

Jang, Chaun ;

Xiao, Shudong ;

Ishigami, Masa ;

Fuhrer, Michael S. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :206-209

[7] Surface transfer hole doping of epitaxial graphene using MoO3 thin film [J].

Chen, Zhenyu ;

Santoso, Iman ;

Wang, Rui ;

Xie, Lan Fei ;

Mao, Hong Ying ;

Huang, Han ;

Wang, Yu Zhan ;

Gao, Xing Yu ;

Chen, Zhi Kuan ;

Ma, Dongge ;

Wee, Andrew Thye Shen ;

Chen, Wei .

APPLIED PHYSICS LETTERS, 2010, 96 (21)

[8] Doping Single-Layer Graphene with Aromatic Molecules [J].

Dong, Xiaochen ;

Fu, Dongliang ;

Fang, Wenjing ;

Shi, Yumeng ;

Chen, Peng ;

Li, Lain-Jong .

SMALL, 2009, 5 (12) :1422-1426

[9] Approaching ballistic transport in suspended graphene [J].

Du, Xu ;

Skachko, Ivan ;

Barker, Anthony ;

Andrei, Eva Y. .

NATURE NANOTECHNOLOGY, 2008, 3 (08) :491-495

[10] Doping graphene with metal contacts [J].

Giovannetti, G. ;

Khomyakov, P. A. ;

Brocks, G. ;

Karpan, V. M. ;

van den Brink, J. ;

Kelly, P. J. .

PHYSICAL REVIEW LETTERS, 2008, 101 (02)

← 1 2 3 →