InAs-based heterojunction bipolar transistors

被引：13

作者：

Maimon, S

Averett, KL

Wu, X

Koch, MW

Wicks, GW

机构：

[1] Univ Rochester, Inst Opt, Rochester, NY 14627 USA

[2] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA

[3] MLPS, Air Force Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 07期

关键词：

Current density - Energy gap - Gain measurement - Heterojunctions - Leakage currents - Molecular beam epitaxy - Semiconducting aluminum compounds - Semiconducting indium compounds - Semiconductor diodes;

D O I：

10.1049/el:20020214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first InAlAs/InA, heterojunction bipolar transistors are reported. A current gain of 100 at room temperature is measured. The base-collector junction is an InAs pn homojunction, Which is optimised to have low reverse leakage at room temperature. The emitter is pseudomorphic AllnAs, linearly graded to increase the barrier which inhibits hole injection into the emitter.

引用

页码：344 / 346

页数：3

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