Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire

被引:61
作者
Gong, Z [1 ]
Gaevski, M [1 ]
Adivarahan, V [1 ]
Sun, W [1 ]
Shatalov, M [1 ]
Khan, MA [1 ]
机构
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
关键词
D O I
10.1063/1.2187429
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a study of reliability of AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire substrate grown by migration-enhanced metal-organic chemical vapor deposition. Two modes of optical power degradation were observed: catastrophic and gradual. The catastrophic degradation is believed to be due to metal alloying at macroscopic defects in the top p layers of the light-emitting diode structure. For the gradual power degradation, two time constants were determined, which were temperature and bias dependent. For the temperature-dependent part, the values of the activation energies and room-temperature degradation rates at dc currents of 10 and 20 mA were determined to be 0.23 and 0.27 eV and 1.31x10(-3) and 5.93x10(-3) h(-1), respectively.
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页数:3
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