Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire

被引：62

作者：

Gong, Z ^{[1
]}

Gaevski, M ^{[1
]}

Adivarahan, V ^{[1
]}

Sun, W ^{[1
]}

Shatalov, M ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期

关键词：

D O I：

10.1063/1.2187429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of reliability of AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire substrate grown by migration-enhanced metal-organic chemical vapor deposition. Two modes of optical power degradation were observed: catastrophic and gradual. The catastrophic degradation is believed to be due to metal alloying at macroscopic defects in the top p layers of the light-emitting diode structure. For the gradual power degradation, two time constants were determined, which were temperature and bias dependent. For the temperature-dependent part, the values of the activation energies and room-temperature degradation rates at dc currents of 10 and 20 mA were determined to be 0.23 and 0.27 eV and 1.31x10(-3) and 5.93x10(-3) h(-1), respectively.

引用

页数：3

共 12 条

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