High-temperature shaping perovskite film crystallization for solar cell fast preparation

被引:27
作者
Ye, Jiajiu [1 ,2 ]
Zheng, Haiying [1 ]
Zhu, Liangzheng [1 ]
Zhang, Xuhui [1 ]
Jiang, Ling [1 ]
Chen, Wangchao [1 ]
Liu, Guozhen [1 ,2 ]
Pan, Xu [1 ]
Dai, Songyuan [3 ]
机构
[1] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Peoples R China
[3] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
基金
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词
High-temperature treatment; Perovskite crystallization; Fast preparation; HALIDE PEROVSKITE; CHARGE-TRANSFER; NUCLEATION; LIFETIMES; MECHANISM; GRAINS; PHASE;
D O I
10.1016/j.solmat.2016.10.022
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Recent developments of PSCs have achieved great progress with power conversion efficiency reached to 22.1%. The crystal growth process as an important factor will significantly influence the quality of perovskite films and the device performance. In this paper, we demonstrate a simple approach for fast preparation based on the precursor compositions of (FAPbI(3))(0.85) (MAPbBr(3))(0.15) by regulating the temperature during annealing process for transition from FAI, PbI2, MABr, and PbBr2 to perovskite. The film will be shaped in 15 s for one-step deposition at annealing temperature of 220 degrees C. It has been found that higher temperature will induce perovskite to form larger size and oriented crystal grains rapidly. This will contribute to longer carrier lifetime and smaller carrier recombination which, are beneficial for solar cell device. The champion cell with PCE of 17.1% had been obtained measured under conditions of AM 1.5 G, 100 mW/cm(2). Furthermore, this method exhibits good stability which is benefited from large size crystal, the device will not be deteriorated and the PCE maintained over 90% after 3 months.
引用
收藏
页码:60 / 66
页数:7
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