A 0.9-μA Quiescent Current Output-Capacitorless LDO Regulator With Adaptive Power Transistors in 65-nm CMOS

被引:113
作者
Chong, Sau Siong [1 ]
Chan, Pak Kwong [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
LDO regulator; output-capacitorless LDO regulator; OCL-LDO regulator; ultra-low quiescent LDO; multi gain stage LDO; LOW-DROPOUT REGULATOR; LOW-VOLTAGE;
D O I
10.1109/TCSI.2012.2215392
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An ultra-low quiescent current output-capacitorless low-dropout (OCL-LDO) regulator with adaptive power transistors technique is presented in this paper. The proposed technique permits the regulator to transform itself between 2-stage and 3-stage cascaded topologies with respective power transistor, depending on the load current condition. As such, it enables the OCL-LDO regulator to achieve ultra-low power consumption, high stability and good transient response without the need of off-chip capacitor at the output. The proposed LDO regulator has been implemented and fabricated in a UMC 65-nm CMOS process. It occupies an active area of 0.017 mm(2). The measured results have shown that the proposed circuit consumes a quiescent current of 0.9 mu A at no load, regulating the output at 1 V from a voltage supply of 1.2 V. It achieves full range stability from 0 to 100 mA load current at a maximum 100 pF parasitic capacitance load. The measured transient output voltage is 68.8 mV when load current is stepped from 0 to 100 mA in 300 ns with C-L = 100 pF. The recovery time is about 6 mu s. Compared to previously reported counterparts, the proposed OCL-LDO regulator shows a significant improvement in term of OCL-LDO transient figure-of-merit (FOM) as well as balanced performance parameters in terms of PSR, line regulation and load regulation.
引用
收藏
页码:1072 / 1081
页数:10
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