A parameter extraction method of the Schottky diode millimeter wave equivalent circuit model

被引:5
|
作者
Huang Hui-Lin [1 ]
Huang Jing [1 ]
Shi Quan [1 ]
机构
[1] Nantong Univ, Sch Informat Sci & Technol, Nantong 226019, Peoples R China
关键词
Schottky diode; equivalent circuits; parameter extraction;
D O I
10.11972/j.issn.1001-9014.2021.06.005
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A millimeter wave equivalent circuit model parameters extraction method for Schottky diodes is proposed in this paper. The pad capacitance has been determined by using open circuit test structure, and the feedline inductance has been determined by using short-circuit test structure. The parasitic resistance has been extracted by using DC method and AC method respectively. An excellent fit between measured and simulated S-parameters in the frequency range of 1 similar to 40 GHz is obtained for GaAs Schottky diode.
引用
收藏
页码:732 / 737
页数:6
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