Self-interstitial kinetics and transient phenomena in Si crystals

被引:1
作者
La Magna, A
Coffa, S
Libertino, S
Strobel, M
Colombo, L
机构
[1] CNR, IMETEM, IT-95121 Catania, Italy
[2] INFM, Dipartimento Fis, IT-09042 Cagliari, Italy
[3] Univ Cagliari, IT-09042 Cagliari, Italy
来源
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷
关键词
interstitial-type defects; Kinetic Monte Carlo approaches; non-equilibrium kinetics; Quantum Mechanics Calculations;
D O I
10.4028/www.scientific.net/SSP.82-84.171
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We elucidated the relationship between structural evolution of Interstitial (I) type defects and the I super-saturation behavior. Two kinetic approaches, validated by quantum mechanical calculations, are used: the Kinetic Lattice Monte Carlo (KLMC) and the Non-Lattice Kinetic Monte Carlo (NKMC). The KLMC model is based on a effective interaction between defective atoms, therefore it can gain access to the atomic details of the cluster structural evolution, whilst the NKMC approach is based only on cluster energetic. The discrepancy between the I supersaturation behavior predicted by the two kinetic approaches demonstrates how, during a far-from equilibrium stage, even the features of average (experimentally observable) quantities is strongly affected by the correspondent aggregate structural evolution.
引用
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页码:171 / 176
页数:6
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