Simulation of characteristics of broadband quantum dot lasers

被引：2
作者：
Tan, C. L.
Wang, Y.
Djie, H. S.
Ooi, B. S. [1 ]
机构：
[1] Lehigh Univ, Ctr Opt Technol, Bethlehem, PA 18015 USA
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 5-6期
关键词：
ultra-broad lasing emission; quantum dot laser; linewidth enhancement factor;
D O I：
10.1007/s11082-008-9225-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Authors theoretically present the characterization of the multiple states broadband InGaAs/GaAs quantum-dot lasers that agrees well with the measured data. Based on the derived model, this new class of semiconductor laser is further characterized theoretically to gain an idea of the derivative characteristic such as linewidth enhancement factor in providing a picture of the competency of this novel device for diverse applications.
引用
收藏
页码：391 / 395
页数：5
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