Modelling of strained-Si/SiGe NMOS transistors including DC self-heating

被引：1
|
作者：
Jankovic, Nebojsa D.
Pesic, Tatjana V.
O'Neill, Anthony
机构：
[1] Fac Elect Engn, Nish 1800, Serbia Monteneg
[2] Newcastle Univ, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
来源：
SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 03期
关键词：
strained-Si; NMOSFET; self-heating; modelling;
D O I：
10.1016/j.sse.2006.02.011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new model of surface-channel strained-Si/SiGe NMOSFETs is derived based on the extension of non-quasi-static (NQS) circuit model developed previously for bulk-Si devices. Basic equations of the NQS MOS model have been modified to account for new physical parameters of strained-Si and relaxed-SiGe layers. In addition, the device steady-state self-heating is efficiently included without employing the thermal-flow analog auxiliary sub-circuits. From the comparisons of modelling results with numerical simulations and measurements, it is shown that a modified NQS MOS including steady-state self-heating can accurately predict the DC characteristics of strained-Si/SiGe NMOSFETs. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：496 / 499
页数：4
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