Formation of iron and iron silicides on silicon and iron surfaces. Role of the deposition rate and volumetric effects

被引:7
作者
Gouralnik, A. S. [1 ]
Dotsenko, S. A. [1 ,2 ]
Galkin, N. G. [1 ,2 ]
Ivanov, V. A. [2 ]
Plotnikov, V. S. [2 ]
Pustovalov, E. V. [2 ]
Cherednichenko, A. I. [2 ,3 ]
Gutakovski, A. K. [4 ]
Neklyudova, M. A. [4 ]
机构
[1] Russian Acad Sci, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia
[2] Far Eastern Fed Univ, Phys Dpt, Vladivostok 690000, Russia
[3] Russian Acad Sci, Inst Chem, Far Eastern Branch, Vladivostok 690022, Russia
[4] Russian Acad Sci, Siberian Branch, AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2013年 / 112卷 / 02期
关键词
GROWTH;
D O I
10.1007/s00339-012-7440-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A thin iron film deposited at the rate of 10(3) nm/sec on the Si(001) surface and a sandwich structure silicon/iron/Si(111) are studied by Surface Magneto-Optic Kerr Effect, High Resolution Electron Microscopy and X-ray Photoelectron Microscopy methods. The phases present in the structures are identified. Both structures are non-uniform. The ultra-fast-deposited film is magnetically hard (H (c)=45 Oe), it contains the silicide Fe5Si3. The XPS line shift by +0.55 eV with respect to the pure iron 2p 3/2 level is attributed to Fe5Si3. The cross-section image of the sandwich structure shows the presence of enhanced-intermixing channels crossing the Si-rich layer. Iron atoms are the main diffusion species both at the Fe/Si(111) and Si/Fe interfaces. The nature of the volume defect and internal stresses in the transforming iron silicides and their effects on material intermixing and film growth process are discussed.
引用
收藏
页码:507 / 515
页数:9
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