Modal gain characteristics of GRIN-InGaAlAs/InP lasing nano-heterostructures

被引：14

作者：

Alvi, P. A. ^{[1
]}

Lal, Pyare ^{[1
]}

Yadav, Rashmi ^{[1
]}

Dixit, Shobhna ^{[2
]}

Dalela, S. ^{[3
]}

机构：

[1] Banasthali Univ, Sch Phys Sci, Dept Phys, Banasthali 304022, Rajasthan, India

[2] Pranveer Singh Inst Technol, Dept Phys, Kanpur, Uttar Pradesh, India

[3] Univ Kota, Dept Pure & Appl Phys, Kota, Rajasthan, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2013年 / 61卷

关键词：

InGaAlAs/InP; GRIN heterostructures; Modal gain; Anti-guiding factor; QUANTUM-WELL INGAASP; ALGAINAS; INP; LASERS; RECOMBINATION; PERFORMANCE; DEPENDENCE; OPERATION; PROGRESS; DESIGN;

D O I：

10.1016/j.spmi.2013.05.019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The paper deals with theoretical investigations of lasing characteristics of GRIN-InGaAlAs/InP nano-heterostructures and specially, the studies have been directed towards the modal gain characteristics within TE and TM polarization modes. The behavior of transparency current density, saturated modal gain and maximum optical loss have also been reported for the SQW and MQWs based lasing nano-heterostructures by studying these parameters for different number of quantum wells. In addition, the temperature and GRIN steps dependent modal gain characteristics along with anti-guiding factor within TE and TM modes have been reported. Since the structure studied in the paper provides maximum gain at the wavelength of 1.55 mu m and 1.33 mu m (wavelengths of minimum attenuation), hence the results reported are very informative for the researchers working in the area of nano-opto-electronics for optical fiber communication systems. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1 / 12

页数：12

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