Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

被引:131
作者
Tahir, M. [1 ]
Manchon, A. [1 ]
Sabeeh, K. [2 ]
Schwingenschloegl, U. [1 ]
机构
[1] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia
[2] Quaid I Azam Univ, Dept Phys, Islamabad 45320, Pakistan
关键词
GRAPHENE;
D O I
10.1063/1.4803084
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4803084]
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页数:4
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