Managing Heat with Diamond: the Example of Diamond/GaN HEMTs

被引:0
|
作者
Mendes, Joana Catarina [1 ,2 ]
Liehr, Michael [3 ]
机构
[1] Univ Aveiro, Inst Telecomunicacoes, Aveiro, Portugal
[2] Univ Aveiro, Dept Eletron Telecomunicacoes & Informat, Aveiro, Portugal
[3] W&L Coating Syst GmbH, Reichelsheim, Germany
来源
2022 IEEE 26TH WORKSHOP ON SIGNAL AND POWER INTEGRITY (SPI) | 2022年
关键词
diamond; thermal management; HEMT; ALGAN/GAN HEMTS; POWER; PERFORMANCE; TECHNOLOGY; INTERFACES;
D O I
10.1109/SPI54345.2022.9874940
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Diamond is the ultimate thermal management material. Its high breakdown electric field and thermal conductivity, together with the availability of artificial diamond plates and the possibility of growing this material on non-diamond substrates have fueled research in applications where thermal management is of utmost importance. This is the case of gallium nitride (GaN) high electron mobility transistors (HEMTs). Power amplifiers based on GaN-on-diamond wafers are already commercially available, attesting the potential and feasibility of integrating diamond and power components. This work describes the different approaches that can be used to integrate diamond and GaN in hybrid devices with increased power capability.
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页数:4
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