ZnO light-emitting devices with a lifetime of 6.8 hours

被引：101

作者：

Liu, J. S. ^{[1
,2
]}

Shan, C. X. ^{[1
]}

Shen, H. ^{[1
,2
]}

Li, B. H. ^{[1
]}

Zhang, Z. Z. ^{[1
]}

Liu, L. ^{[1
]}

Zhang, L. G. ^{[1
]}

Shen, D. Z. ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Luminescence & Applicat, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 01期

关键词：

PHOTOLUMINESCENCE; DEPENDENCE; SAPPHIRE; EPITAXY; GROWTH; FILMS;

D O I：

10.1063/1.4733298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lithium-nitrogen doped p-type Mg0.25Zn0.75O films have been realized, and p-Mg0.25Zn0.75O/n-ZnO single-heterostructured light-emitting devices (LEDs) have been constructed. Obvious emission at around 392 nm has been observed from the LEDs under the injection of continuous current, which can be attributed to the near-band-edge emission of ZnO. The LED can work continuously for 6.8 h under a continuous current of 20 mA, revealing the good reliability of the LED. The results reported in this letter reveal that reliable ZnO-based LEDs can be realized, thus high-performance ZnO-based LEDs may be promised in the future. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733298]

引用

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