Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface

被引：17
|
作者：
Barone, C. [1 ,2 ]
Romeo, F. [1 ,2 ]
Pagano, S. [1 ,2 ]
Di Gennaro, E. [3 ,4 ]
Granozio, F. Miletto [3 ,4 ]
Pallecchi, I. [5 ,6 ]
Marre, D. [5 ,6 ]
di Uccio, U. Scotti [3 ,4 ]
机构：
[1] Univ Salerno, Dipartimento Fis ER Caianiello, I-84084 Salerno, Italy
[2] Univ Salerno, CNR SPIN Salerno, I-84084 Salerno, Italy
[3] Univ Naples Federico II, CNR SPIN Napoli, I-80126 Naples, Italy
[4] Univ Naples Federico II, Dipartimento Fis, I-80126 Naples, Italy
[5] Univ Genoa, CNR SPIN Genova, I-16152 Genoa, Italy
[6] Univ Genoa, Dipartimento Fis, I-16152 Genoa, Italy
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 23期
关键词：
1/F NOISE; SURFACE;
D O I：
10.1063/1.4838637
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The voltage-spectral density SV (f) of the 2-dimensional electron gas formed at the interface of LaAlO3/SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas. (C) 2013 AIP Publishing LLC.
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页数：4
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