Analyses on atomic arrangement in dielectric ε-Ga2O3 epitaxial thin films

被引：12

作者：

Oka, Daichi ^{[1
]}

Yusa, Subaru ^{[1
]}

Kimura, Koji ^{[2
]}

Ang, Artoni Kevin R. ^{[2
]}

Happo, Naohisa ^{[3
]}

Hayashi, Kouichi ^{[2
,4
]}

Fukumura, Tomoteru ^{[1
,5
,6
]}

机构：

[1] Tohoku Univ, Grad Sch Sci, Dept Chem, Sendai, Miyagi 9808578, Japan

[2] Nagoya Inst Technol, Dept Phys Sci & Engn, Nagoya, Aichi 4668555, Japan

[3] Hiroshima City Univ, Grad Sch Informat Sci, Hiroshima 7313194, Japan

[4] Nagoya Inst Technol, Frontier Res Inst Mat Sci, Nagoya, Aichi 4668555, Japan

[5] Tohoku Univ, Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[6] Tohoku Univ, Core Res Cluster, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 01期

关键词：

RAY-FLUORESCENCE HOLOGRAPHY; CHEMICAL-VAPOR-DEPOSITION; HETEROEPITAXIAL GROWTH; GALLIUM OXIDE;

D O I：

10.7567/1347-4065/ab58a1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local atomic arrangements of dielectric epsilon-Ga2O3 epitaxial thin films grown on indium doped tin oxide (ITO) and alpha-Al2O3 substrates were investigated by combining transmission electron microscopy (TEM) and X-ray fluorescence holography (XFH). TEM showed the orthorhombic lattice structure for the epsilon-Ga2O3 thin film on both the substrates and a significant in-plane Ga ion displacement on alpha-Al2O3. However, XFH revealed a partial disorder of Ga vacancies and a large displacement along the a-axis on ITO. On the other hand, highly ordered Ga vacancies and a displacement of Ga ions toward the Ga vacancy sites were observed for the film on alpha-Al2O3 by XFH. Such a high degree of freedom in atomic sites and displacements is believed to contribute to a high dielectric constant of epsilon-Ga2O3. (C) 2019 The Japan Society of Applied Physics

引用

页数：6

共 42 条

[1] Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates [J].

Akaiwa, Kazuaki ;

Kaneko, Kentaro ;

Ichino, Kunio ;

Fujita, Shizuo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)

[2] Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer [J].

Arata, Y. ;

Nishinaka, H. ;

Tahara, D. ;

Yoshimoto, M. .

CRYSTENGCOMM, 2018, 20 (40) :6236-6242

[3] REMOVING MULTIPLE-SCATTERING AND TWIN IMAGES FROM HOLOGRAPHIC IMAGES [J].

BARTON, JJ .

PHYSICAL REVIEW LETTERS, 1991, 67 (22) :3106-3109

[4] Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films [J].

Bi, Xiaoyu ;

Wu, Zhenping ;

Huang, Yuanqi ;

Tang, Weihua .

AIP ADVANCES, 2018, 8 (02)

[5] Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD [J].

Boschi, F. ;

Bosi, M. ;

Berzina, T. ;

Buffagni, E. ;

Ferrari, C. ;

Fornari, R. .

JOURNAL OF CRYSTAL GROWTH, 2016, 443 :25-30

[6] Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures [J].

Chen, Xuanhu ;

Xu, Yang ;

Zhou, Dong ;

Yang, Sen ;

Ren, Fang-fang ;

Lu, Hai ;

Tang, Kun ;

Gu, Shulin ;

Zhang, Rong ;

Zheng, Youdou ;

Ye, Jiandong .

ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (42) :36997-37005

[7] Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β-Ga2O3 Films on Al2O3 via Metal-Organic Chemical Vapor Deposition [J].

Chen, Yuanpeng ;

Xia, Xiaochuan ;

Liang, Hongwei ;

Abbas, Qasim ;

Liu, Yang ;

Du, Guotong .

CRYSTAL GROWTH & DESIGN, 2018, 18 (02) :1147-1154

[8] Layer-by-layer growth of ε-Ga2O3 thin film by metal-organic chemical vapor deposition [J].

Chen, Zimin ;

Li, Zeqi ;

Zhuo, Yi ;

Chen, Weiqu ;

Ma, Xuejin ;

Pei, Yanli ;

Wang, Gang .

APPLIED PHYSICS EXPRESS, 2018, 11 (10)

[9] The real structure of ε-Ga2O3 and its relation to κ-phase [J].

Cora, Ildiko ;

Mezzadri, Francesco ;

Boschi, Francesco ;

Bosi, Matteo ;

Caplovicova, Maria ;

Calestani, Gianluca ;

Dodony, Istvan ;

Pecz, Bela ;

Fornari, Roberto .

CRYSTENGCOMM, 2017, 19 (11) :1509-1516

[10] Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices [J].

Fujita, Shizuo ;

Oda, Masaya ;

Kaneko, Kentaro ;

Hitora, Toshimi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)

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