Kinetic pathways to strain relaxation in the Si-Ge system

被引：111
|
作者：
Jesson, DE [1 ]
Chen, KM [1 ]
Pennycook, SJ [1 ]
机构：
[1] OAK RIDGE NATL LAB,ELECTRON MICROSCOPY GRP,OAK RIDGE,TN 37831
来源：
MRS BULLETIN | 1996年 / 21卷 / 04期
关键词：
D O I：
10.1557/S0883769400035314
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：31 / 37
页数：7
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