Determination of parametrs in semiconductors using the Shubnikov-de Haas effect

被引：0

作者：

Kornilovich, AA ^{[1
]}

机构：

[1] State Tech Univ, Novosibirsk, Russia

来源：

APEIE-98: 1998 4TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The oscillations of reflect-ion and transmission coefficients of the probing radiation (Shubnikov-de Haas (SdH) effect) in a low-dimensional structures GaAs/AlGaAs, containing the quantum wells,;and in a degenerate n-InSb at low temperature (similar to 2 K) were investigated. The possibility to contactless determination of the transport parameters in semiconductors, based on the observations of the oscillations SdH at temperatures liquid nitrogen, is discussed.

引用

页码：22 / 23

页数：2

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