Determination of parametrs in semiconductors using the Shubnikov-de Haas effect

被引：0
|
作者：
Kornilovich, AA [1 ]
机构：
[1] State Tech Univ, Novosibirsk, Russia
来源：
APEIE-98: 1998 4TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1 | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The oscillations of reflect-ion and transmission coefficients of the probing radiation (Shubnikov-de Haas (SdH) effect) in a low-dimensional structures GaAs/AlGaAs, containing the quantum wells,;and in a degenerate n-InSb at low temperature (similar to 2 K) were investigated. The possibility to contactless determination of the transport parameters in semiconductors, based on the observations of the oscillations SdH at temperatures liquid nitrogen, is discussed.
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页码：22 / 23
页数：2
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