Fabrication and Characterization of a p-AgO/PSi/n-Si Heterojunction for Solar Cell Applications

被引：8

作者：

Habubi, Nadir F. ^{[1
]}

Abd, Ahmed N. ^{[2
]}

Dawood, Mohammed O. ^{[2
]}

Reshak, A. H. ^{[3
,4
]}

机构：

[1] Univ Al Mustansiriyah, Educ Fac, Phys Dept, Baghdad, Iraq

[2] Univ Al Mustansiriyah, Sci Fac, Phys Dept, Baghdad, Iraq

[3] Univ West Bohemia, New Technol Res Ctr, Univ 8, Plzen 30614, Czech Republic

[4] Univ Malaysia Perlis, Sch Mat Engn, Ctr Excellence Geopolymer & Green Technol, Kangar 01007, Perlis, Malaysia

来源：

SILICON | 2018年 / 10卷 / 02期

关键词：

AgO; Thermal oxidation; Lifetime; Heterodiode; XRD; AFM; SEM; SILVER-OXIDE; CONVERSION; NANOWIRES; AG2O;

D O I：

10.1007/s12633-016-9457-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A p-AgO/PSi/n-Si heterojunction was deposited by high vacuum thermal evaporation of silver subjected to thermal oxidation at 300 C-ay on porous silicon. Surface morphology and electrical properties of this structure have been studied. The X-ray diffraction (XRD) analysis reveals that the peaks at the (220) and (111) planes were dominated for the crystal quality of the AgO films. The band gap of the AgO films was found to be 2.2 eV and 3.2 eV . The positive sign of Hall effect confirms that the film was of p-type conductivity. The average grain size of pore was measured from the atomic force microscope (AFM) analysis and found to be around 32 nm. The responsivity photodetector after deposited AgO have revealed increasing in response.

引用

页码：371 / 376

页数：6

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