Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors

被引：9

作者：

Cheong, Woo-Seok ^{[1
]}

Park, Jonghyurk ^{[1
]}

Shin, Jae-Heon ^{[1
]}

机构：

[1] ETRI, Convergence Components & Mat Res Lab, Taejon, South Korea

来源：

ETRI JOURNAL | 2012年 / 34卷 / 06期

关键词：

In-Ga-Zn oxide; IGZO; electrical stability; thin-film transistor; XPS; oxygen binding energy; BIAS-STRESS;

D O I：

10.4218/etrij.12.0212.0232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

引用

页码：966 / 969

页数：4

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