Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors

被引：9
|
作者：
Cheong, Woo-Seok [1 ]
Park, Jonghyurk [1 ]
Shin, Jae-Heon [1 ]
机构：
[1] ETRI, Convergence Components & Mat Res Lab, Taejon, South Korea
来源：
ETRI JOURNAL | 2012年 / 34卷 / 06期
关键词：
In-Ga-Zn oxide; IGZO; electrical stability; thin-film transistor; XPS; oxygen binding energy; BIAS-STRESS;
D O I：
10.4218/etrij.12.0212.0232
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.
引用
收藏
页码：966 / 969
页数：4
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