Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors

被引：9
作者：
Cheong, Woo-Seok [1 ]
Park, Jonghyurk [1 ]
Shin, Jae-Heon [1 ]
机构：
[1] ETRI, Convergence Components & Mat Res Lab, Taejon, South Korea
来源：
ETRI JOURNAL | 2012年 / 34卷 / 06期
关键词：
In-Ga-Zn oxide; IGZO; electrical stability; thin-film transistor; XPS; oxygen binding energy; BIAS-STRESS;
D O I：
10.4218/etrij.12.0212.0232
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.
引用
收藏
页码：966 / 969
页数：4
相关论文
共 18 条
[1]   Toward High-Performance Amorphous GIZO TFTs [J].
Barquinha, P. ;
Pereira, L. ;
Goncalves, G. ;
Martins, R. ;
Fortunato, E. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (03) :H161-H168
[2]   Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays [J].
Chen, Charlene ;
Abe, Katsumi ;
Fung, Tze-Ching ;
Kumomi, Hideya ;
Kanicki, Jerzy .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (03)
[3]   Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors [J].
Cheong, Woo-Seok ;
Lee, Jeong-Min ;
Lee, Jong-Ho ;
Park, Sang-Hee Ko ;
Yoon, Sung Min ;
Byun, Chun-Won ;
Yang, Shinhyuk ;
Chung, Sung Mook ;
Cho, Kyoung Ik ;
Hwang, Chi-Sun .
ETRI JOURNAL, 2009, 31 (06) :660-666
[4]   Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor [J].
Cheong, Woo-Seok ;
Yoon, Young-sun ;
Shin, Jae-Heon ;
Hwang, Chi-Sun ;
Chu, Hye Yong .
THIN SOLID FILMS, 2009, 517 (14) :4094-4099
[5]   Local structure and conduction mechanism in amorphous In-Ga-Zn-O films [J].
Cho, Deok-Yong ;
Song, Jaewon ;
Na, Kwang Duk ;
Hwang, Cheol Seong ;
Jeong, Jong Han ;
Jeong, Jae Kyeong ;
Mo, Yeon-Gon .
APPLIED PHYSICS LETTERS, 2009, 94 (11)
[6]   Stability of transparent zinc tin oxide transistors under bias stress [J].
Goerrn, P. ;
Hoelzer, P. ;
Riedl, T. ;
Kowalsky, W. ;
Wang, J. ;
Weimann, T. ;
Hinze, P. ;
Kipp, S. .
APPLIED PHYSICS LETTERS, 2007, 90 (06)
[7]   Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system [J].
Iwasaki, Tatsuya ;
Itagaki, Naho ;
Den, Tohru ;
Kumomi, Hideya ;
Nomura, Kenji ;
Kamiya, Toshio ;
Hosono, Hideo .
APPLIED PHYSICS LETTERS, 2007, 90 (24)
[8]   Effects of gate bias stress on the electrical characteristics of ZnO thin film transistor [J].
Jeon, Jae-Hong ;
Choe, Hee-Hwan ;
Lee, Kang-Woong ;
Shin, Jae-Heon ;
Hwang, Chi-Sun ;
Park, Sang-Hee Ko ;
Seo, Jong-Hyun .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (01) :412-415
[9]   Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].
Jeong, Jae Kyeong ;
Yang, Hui Won ;
Jeong, Jong Han ;
Mo, Yeon-Gon ;
Kim, Hye Dong .
APPLIED PHYSICS LETTERS, 2008, 93 (12)
[10]   Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].
Lee, Jeong-Min ;
Cho, In-Tak ;
Lee, Jong-Ho ;
Kwon, Hyuck-In .
APPLIED PHYSICS LETTERS, 2008, 93 (09)
12