Influence of SiO2/Si Interface Charge on Performance of UMOS

被引：0

作者：

Zeng, Sijie ^{[1
]}

Feng, Quanyuan ^{[1
]}

Chen, Xiaopei ^{[1
]}

Jin, Tao ^{[1
]}

Zhao, Zhengxi ^{[1
]}

机构：

[1] Southwest Jiaotong Univ, Inst Microelect, Chengdu 610031, Sichuan, Peoples R China

来源：

2017 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal oxidizing process used to manufacture UMOS causes the interface of SiO2/Si existing a great deal of interface charge, which influenced the electrical properties of device. The SWB platform is used to investigate the influence of Si02/Si interface charge on the electrical properties of UMOS. The simulation result shows that the drain current increases with the increase of interface charge, and the breakdown voltage, threshold voltage and on-resistance decrease with the increase of interface charge, which is consistent with theoretical analysis. The influence of interface charge on the electrical properties of UMOS is negligible when the surface charge density is lower than 2.5e11 cm(-2), on the contrary, it will make the drain current increase and breakdown voltage drop sharply and even make a failure of the device.

引用

页码：1798 / 1801

页数：4

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