Dirac's HdCdTe semimetals grown by MBE technology

被引：1

作者：

Grendysa, Jakub ^{[1
]}

Becker, Charles R. ^{[1
]}

Trzyna, Malgorzata ^{[1
]}

Wojnarowska-Nowak, Renata ^{[1
]}

Bobko, Ewa ^{[1
,2
]}

Sheregii, Eugen M. ^{[1
]}

机构：

[1] Univ Rzeszow, Ctr Microelect & Nanotechnol, Pigonia 1, PL-35959 Rzeszow, Poland

[2] Polish Acad Sci, Inst Phys, Lotnikow 32-46 Av, PL-02668 Warsaw, Poland

来源：

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR NANOSTRUCTURES FOR OPTOELECTRONICS AND BIOSENSORS (IC SENOB 2016) | 2017年 / 133卷

关键词：

SURFACE-MORPHOLOGY;

D O I：

10.1051/epjconf/201713301002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Peculiarities of the MBE growth technology for the Dirac's semimetal based on the Hg1-xCdxTe alloys have been presented. Composition of layers was controlled by ToF-SIMS, FTIR measurements, and by the E1+Delta 1 maximum position of optical reflectivity in visible reason. The surface morphology has by determined via atomic force and electron microscopy.

引用

页数：3