Dirac's HdCdTe semimetals grown by MBE technology

被引：1
作者：
Grendysa, Jakub [1 ]
Becker, Charles R. [1 ]
Trzyna, Malgorzata [1 ]
Wojnarowska-Nowak, Renata [1 ]
Bobko, Ewa [1 ,2 ]
Sheregii, Eugen M. [1 ]
机构：
[1] Univ Rzeszow, Ctr Microelect & Nanotechnol, Pigonia 1, PL-35959 Rzeszow, Poland
[2] Polish Acad Sci, Inst Phys, Lotnikow 32-46 Av, PL-02668 Warsaw, Poland
来源：
INTERNATIONAL CONFERENCE ON SEMICONDUCTOR NANOSTRUCTURES FOR OPTOELECTRONICS AND BIOSENSORS (IC SENOB 2016) | 2017年 / 133卷
关键词：
SURFACE-MORPHOLOGY;
D O I：
10.1051/epjconf/201713301002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Peculiarities of the MBE growth technology for the Dirac's semimetal based on the Hg1-xCdxTe alloys have been presented. Composition of layers was controlled by ToF-SIMS, FTIR measurements, and by the E1+Delta 1 maximum position of optical reflectivity in visible reason. The surface morphology has by determined via atomic force and electron microscopy.
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