Argon nanobubbles in Al(111): A photoemission study

被引：33

作者：

Biswas, C

Shukla, AK

Banik, S

Barman, SR

Chakrabarti, A

机构：

[1] Inter Univ Consortium, Dept Atom Energy Facilities, Indore 452017, Madhya Pradesh, India

[2] Ctr Adv Technol, Laser Phys Div, Indore 452013, Madhya Pradesh, India

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.92.115506

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two fundamental manifestations of Al conduction electron response to Ar atom core hole in the final state of photoemission have been studied in implanted Ar bubbles in Al(111). Ar 2p binding energy and the Doniach-Sunjic asymmetry of the core-level line shape vary systematically as functions of Ar+ implantation energy and number of ions bombarded (fluence). The observations are explained by relating the strength of Al conduction electron screening to the size of the Ar nanobubbles.

引用

页码：115506 / 1

页数：4

共 29 条

[1] LINE ASYMMETRY IN THE X-RAY PHOTOELECTRON-SPECTRA OF AR AND K IMPLANTED IN AL [J].