Preparation of metallic single-wall carbon nanotubes

被引：27

作者：

Li, Xiao-Qi ^{[1
,2
]}

Hou, Peng-Xiang ^{[1
,2
]}

Liu, Chang ^{[1
,2
]}

Cheng, Hui-Ming ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China

[2] Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China

[3] Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Low Dimens Mat & Device Lab, Shenzhen 518055, Peoples R China

来源：

CARBON | 2019年 / 147卷

基金：

中国国家自然科学基金;

关键词：

CAP PRECURSOR MOLECULES; ELECTRONIC-STRUCTURE; CHIRALITY SEPARATION; CONTROLLED GROWTH; 6,6 ARMCHAIR; THIN-FILMS; 9,0 ZIGZAG; ENRICHMENT; ARRAYS; FABRICATION;

D O I：

10.1016/j.carbon.2019.02.089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Metallic single-wall carbon nanotubes (m-SWCNTs) have a high electrical conductivity due to ballistic electron transport, and have a bright future for use in nanocircuitry, conductive fibers, and transparent conductive films. To realize these applications, it is essential to obtain pure, high-quality m-SWCNTs on a large scale. In recent years, many techniques such as density-gradient centrifugation, gel chromatography, selective etching, direct growth by catalyst design and external electric field assistance have been developed to prepare m-SWCNTs. Here we present a state-of-the-art overview of the preparation of m-SWCNTs focusing on the principles, methods, and their advantages and limitations. The key challenges remaining for obtaining high quality m-SWCNTs with a high yield are discussed, and the developing trend for the selective preparation of m-SWCNTs is examined. (c) 2019 Elsevier Ltd. All rights reserved.

引用

页码：187 / 198

页数：12

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