Characterization of interfacial states at silicon bicrystals

被引：0
作者：
Kamaev, GN
Golod, S
Skok, EM
Fedotov, A
Mazanik, A
机构：
[1] Russian Acad Sci, Inst Semicond Phys, RU-630090 Novosibirsk, Russia
[2] Belarusian State Univ, RU-220050 Minsk, BELARUS
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷
关键词：
defects; direct bonding; grain boundary; interface; microwave transient photoconductivity; polycrystal; silicon; silicon-on-insulator;
D O I：
10.4028/www.scientific.net/SSP.82-84.801
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Properties of "silicon-silicon" interfaces in silicon bicrystals produced both by edge-defined film-fed growth and direct bonding methods are investigated using computer-controlled transient photoconductivity, I-V and C-V measurements. The parameters of boundary trap centers (the activation energies, cross sections and energy distribution of states in the forbidden gap) at the interface profiles of boron atoms in the vicinity of boundaries in polycrystalline silicon and directly-bonded silicon wafers are found.
引用
收藏
页码：801 / 806
页数：6
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