Sub 60 mV/decade Switch Using an InAs Nanowire-Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique

被引：62

作者：

Tomioka, Katsuhiro ^{[1
,2
,3
]}

Yoshimura, Masatoshi ^{[1
,2
]}

Fukui, Takashi ^{[1
,2
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

[2] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan

[3] Japan Sci & Technol Agcy JST, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

NANO LETTERS | 2013年 / 13卷 / 12期

基金：

日本科学技术振兴机构;

关键词：

III-V nanowire; selective-area growth; doping; novel transistor; FIELD-EFFECT TRANSISTORS; PERFORMANCE; IMPACT;

D O I：

10.1021/nl402447h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report changes of turn-on voltage in InAs-Si heterojunction steep subthreshold-slope transistors by the Zn-pulsed doping technique for InAs nanowire channels. The doping of the nanowire channel moderately changes turn-on voltage from negative to positive voltage, while keeping a steep subthreshold-slope of 30 mV/decade under reverse bias direction. The formation of pseudointrinsic InAs segment is found to be important to make a normally off transistor with a steep subthreshold slope.

引用

页码：5822 / 5826

页数：5

共 34 条

[1] CHARACTERIZATION OF BIPOLAR SNAPBACK AND BREAKDOWN VOLTAGE IN THIN-FILM SOI TRANSISTORS BY 2-DIMENSIONAL SIMULATION [J].