Optical and excitonic properties of ZnO films

被引:28
作者
Mihailovic, M. [1 ]
Henneghien, A. -L. [1 ]
Faure, S. [2 ]
Disseix, P. [1 ]
Leymarie, J. [1 ]
Vasson, A. [1 ]
Buell, D. A. [3 ]
Semond, F. [3 ]
Morhain, C. [3 ]
Perez, J. Zuniga [3 ]
机构
[1] CNRS, UMR UBP 6602, LASMEA, F-63177 Aubiere, France
[2] Univ Montpellier 2, GES, UMR CNRS 5650, F-34095 Montpellier, France
[3] CNRS, CRHEA, F-06560 Valbonne, France
关键词
THIN-FILMS; PHOTOLUMINESCENCE; CONSTANTS; GAN;
D O I
10.1016/j.optmat.2007.10.023
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical and excitonic properties of ZnO heterostructures are studied in order to observe the strong light-matter coupling in this material as it has been recently demonstrated in GaN. The optical index of ZnO is first studied as a function of wavelength through spectroscopic ellipsometric and reflectivity experiments oil ZnO layers grown by molecular beam epitaxy and deposited oil two different substrates: sapphire and silicon with an AlN buffer layer. The main features of the excitons: energy, oscillator strength and broadening are deduced. From the knowledge of these properties, a microcavity is then designed. The ZnO active layer is embedded between AlGaN/AlN and dielectric Bragg mirrors. The calculation of the reflectivity spectra as a function of the incident angle attests the strong coupling and a large Rabi splitting of 110 meV is expected ill such a cavity. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:532 / 536
页数:5
相关论文
共 13 条
[1]  
Abeles F., 1950, Ann. de Physique, V5, P596, DOI DOI 10.1051/ANPHYS/195012050596
[2]   Observation of Rabi splitting in a bulk GaN microcavity grown on silicon [J].
Antoine-Vincent, N ;
Natali, F ;
Byrne, D ;
Vasson, A ;
Disseix, P ;
Leymarie, J ;
Leroux, M ;
Semond, F ;
Massies, J .
PHYSICAL REVIEW B, 2003, 68 (15)
[3]   Determination of the refractive indices of AlN, GaN, and AlxGa1-xN grown on (111)Si substrates [J].
Antoine-Vincent, N ;
Natali, F ;
Mihailovic, M ;
Vasson, A ;
Leymarie, J ;
Disseix, P ;
Byrne, D ;
Semond, F ;
Massies, J .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5222-5226
[4]  
Azzam R.M.A., 1977, ELLIPSOMETRY POLARIS
[5]   Photoluminescence studies in ZnO samples [J].
Boemare, C ;
Monteiro, T ;
Soares, MJ ;
Guilherme, JG ;
Alves, E .
PHYSICA B-CONDENSED MATTER, 2001, 308 :985-988
[7]   Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO [J].
Chichibu, SF ;
Uedono, A ;
Tsukazaki, A ;
Onuma, T ;
Zamfirescu, M ;
Ohtomo, A ;
Kavokin, A ;
Cantwell, G ;
Litton, CW ;
Sota, T ;
Kawasaki, M .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S67-S77
[8]   ZnO rediscovered - once again!? [J].
Klingshirn, C ;
Hauschild, R ;
Priller, H ;
Decker, M ;
Zeller, J ;
Kalt, H .
SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (4-6) :209-222
[9]   Extraction of optical constants of zinc oxide thin films by ellipsometry with various models [J].
Liu, YC ;
Hsieh, JH ;
Tung, SK .
THIN SOLID FILMS, 2006, 510 (1-2) :32-38
[10]   A comprehensive review of ZnO materials and devices -: art. no. 041301 [J].
Ozgür, U ;
Alivov, YI ;
Liu, C ;
Teke, A ;
Reshchikov, MA ;
Dogan, S ;
Avrutin, V ;
Cho, SJ ;
Morkoç, H .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) :1-103