Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

被引:442
作者
Sahin, H. [1 ]
Tongay, S. [2 ]
Horzum, S. [1 ,3 ]
Fan, W. [2 ]
Zhou, J. [2 ]
Li, J. [4 ]
Wu, J. [2 ,5 ]
Peeters, F. M. [1 ]
机构
[1] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[3] Ankara Univ, Dept Engn Phys, Fac Engn, TR-06100 Ankara, Turkey
[4] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1103/PhysRevB.87.165409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Typical Raman spectra of transition-metal dichalcogenides (TMDs) display two prominent peaks, E-2g and A(1g), that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak in contrast to other TMDs. As the dimensionality is lowered, the observed peak splits in two. In contrast, our ab initio calculations predict that the degeneracy is retained even for WSe2 monolayers. Interestingly, for minuscule biaxial strain, the degeneracy is preserved, but once the crystal symmetry is broken by a small uniaxial strain, the degeneracy is lifted. Our calculated phonon dispersion for uniaxially strained WSe2 shows a good match to the measured Raman spectrum, which suggests that uniaxial strain exists in WSe2 flakes, possibly induced during the sample preparation and/or as a result of the interaction between WSe2 and the substrate. Furthermore, we find that WSe2 undergoes an indirect-to-direct band-gap transition from bulk to monolayers, which is ubiquitous for semiconducting TMDs. These results not only allow us to understand the vibrational and electronic properties of WSe2, but also point to effects of the interaction between the monolayer TMDs and the substrate on the vibrational and electronic properties. DOI: 10.1103/PhysRevB.87.165409
引用
收藏
页数:6
相关论文
共 50 条
[31]   Investigating the impact of ITO substrates on the optical and electronic properties of WSe2 monolayers [J].
Brito, Thiago G. L. ;
Costa, Fabio J. R. ;
Ceccatto, Alisson ;
de Almeida, Charles A. N. ;
de Siervo, Abner ;
Couto Jr, Odilon D. D. ;
Barcelos, Ingrid David ;
Zagonel, Luiz Fernando .
NANOTECHNOLOGY, 2025, 36 (05)
[32]   Thermal Expansion, Anharmonicity and Temperature-Dependent Raman Spectra of Single- and Few-Layer MoSe2 and WSe2 [J].
Late, Dattatray J. ;
Shirodkar, Sharmila N. ;
Waghmare, Umesh V. ;
Dravid, Vinayak P. ;
Rao, C. N. R. .
CHEMPHYSCHEM, 2014, 15 (08) :1592-1598
[33]   Strain-dependent electronic and magnetic of Co-doped monolayer of WSe2 [J].
Wu, Ninghua ;
Zhao, Xu ;
Wang, Tianxing .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 84 :505-510
[34]   Thickness-Dependent Magnetism and Topological Properties of EuSn2As2 [J].
Lv, Xiaodong ;
Chen, Xuejiao ;
Zhang, Bingwen ;
Jiang, Peiheng ;
Zhong, Zhicheng .
ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (07) :3212-3219
[35]   Temperature-dependent Raman spectroscopy studies of 1-5-layer WSe2 [J].
Li, Zhonglin ;
Wang, Yingying ;
Jiang, Jie ;
Liang, Yao ;
Zhong, Bo ;
Zhang, Hong ;
Yu, Kai ;
Kan, Guangfeng ;
Zou, Mingqiang .
NANO RESEARCH, 2020, 13 (02) :591-595
[36]   Temperature-dependent Raman spectroscopy studies of 1–5-layer WSe2 [J].
Zhonglin Li ;
Yingying Wang ;
Jie Jiang ;
Yao Liang ;
Bo Zhong ;
Hong Zhang ;
Kai Yu ;
Guangfeng Kan ;
Mingqiang Zou .
Nano Research, 2020, 13 :591-595
[37]   Occupied and unoccupied electronic band structure of WSe2 [J].
Finteis, T ;
Hengsberger, M ;
Straub, T ;
Fauth, K ;
Claessen, R ;
Auer, P ;
Steiner, P ;
Hufner, S ;
Blaha, P ;
Vogt, M ;
LuxSteiner, M ;
Bucher, E .
PHYSICAL REVIEW B, 1997, 55 (16) :10400-10411
[38]   Ultrafast Nanoimaging of Electronic Coherence of Monolayer WSe2 [J].
Luo, Wenjin ;
Whetten, Benjamin G. ;
Kravtsov, Vasily ;
Singh, Ashutosh ;
Yang, Yibo ;
Huang, Di ;
Cheng, Xinbin ;
Jiang, Tao ;
Belyanin, Alexey ;
Raschke, Markus B. .
NANO LETTERS, 2023, 23 (05) :1767-1773
[39]   Manipulation of electronic structure in WSe2 monolayer by strain [J].
Yang, Cong-xia ;
Zhao, Xu ;
Wei, Shu-yi .
SOLID STATE COMMUNICATIONS, 2016, 245 :70-74
[40]   Thickness dependent friction on few-layer MoS2, WS2, and WSe2 [J].
Fang, Liang ;
Liu, Da-Meng ;
Guo, Yuzheng ;
Liao, Zhi-Min ;
Luo, Jian-Bin ;
Wen, Shi-Zhu .
NANOTECHNOLOGY, 2017, 28 (24)