Tunneling behavior in ion-assist ion-beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions

被引：8

作者：

Singh, Braj Bhusan ^{[1
]}

Chaudhary, Sujeet ^{[1
]}

Pandya, Dinesh K. ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India

来源：

MATERIALS RESEARCH BULLETIN | 2012年 / 47卷 / 11期

关键词：

Multilayers; Sputtering; Defects; Electrical properties; Magnetic structure; ROOM-TEMPERATURE; MAGNETORESISTANCE; MGO; DEPENDENCE;

D O I：

10.1016/j.materresbull.2012.06.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetic tunnel junctions (MTJs) consisting of CoFe and NiFe as ferromagnetic electrodes and MgO as insulating barrier fabricated through in situ shadow masking employing ion beam sputtering are studied for their tunneling magnetoresistance (TMR) and temperature dependence of the tunneling conductance behavior. The tunneling characteristics of these Mills exhibited barrier height of 0.7 eV and width of 3.3 nm. These MTJs possessed similar to 12% TMR at 60 K. The temperature dependence of conductance behavior of these junctions have revealed finite contributions from inelastic tunneling through the barrier via hopping conduction via present localized states which arise due to the presence of ionic interstitial defects in the MgO oxide barrier. The fitting of the data reveals that thirteenth order of hopping conduction is operative through MgO barrier. (c) 2012 Elsevier Ltd. All rights reserved.

引用

页码：3786 / 3790

页数：5

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