Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908

被引：3
作者：
Zhao, L [1 ]
Zuo, YH
Shi, WH
Wang, QM
Chen, YH
Wang, HN
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Inst Elect, State Key Lab Sensing Tech, Beijing 100080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 07期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2172223
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Si0.75Ge0.25/Si/Si0.5Ge0.5 trilayer asymmetric superlattices were prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The nonlinear optical response caused by inherent asymmetric interfaces in this structure predicted by theories was verified by in-plane optical anisotropy in (001) plane measured via reflectance difference spectroscopy. The results show Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice is optically biaxial and the two optical eigen axes in (001) plane are along the directions [110] and [-110], respectively. Reflectance difference response between the above two eigen axes can be influenced by the width of the trilayers and reaches as large as similar to 10(-4)-10(-3) in 15-period 2.7 nm-Si0.75Ge0.25/8 nm-Si/1.3 nm-Si0.5Ge0.5 superlattice when the normal incident light wavelength is in the range of 500-1100 nm, which is quite remarkable because the optical anisotropy does not exist in bulk Si.
引用
收藏
页数：3
相关论文
共 26 条
[1]   ABOVE-BANDGAP OPTICAL ANISOTROPIES IN CUBIC SEMICONDUCTORS - A VISIBLE NEAR ULTRAVIOLET PROBE OF SURFACES [J].
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1498-1506
[2]   Reflectance difference spectroscopy during CdTe/ZnTe interface formation [J].
Balderas-Navarro, RE ;
Hingerl, K ;
Stifter, D ;
Bonanni, A ;
Sitter, H .
APPLIED SURFACE SCIENCE, 2002, 190 (1-4) :307-310
[3]   X-ray scattering investigation of the interfaces in Si/Si1-xGex superlattices on Si(001) grown by MBE and UHV-CVD [J].
Baribeau, JM ;
Lafontaine, H .
THIN SOLID FILMS, 1998, 321 :141-147
[4]   Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy -: art. no. 195321 [J].
Chen, YH ;
Ye, XL ;
Wang, JZ ;
Wang, ZG ;
Yang, Z .
PHYSICAL REVIEW B, 2002, 66 (19) :1-5
[5]   LINEAR AND QUADRATIC ELECTROOPTIC EFFECTS IN SYMMETRICAL AND ASYMMETRIC QUANTUM-WELL STRUCTURES [J].
FRIEDMAN, LR ;
SOREF, RA ;
KHURGIN, JB .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (02) :219-227
[6]   Heavy-light hole mixing at zinc-blende (001) interfaces under normal incidence [J].
Ivchenko, EL ;
Kaminski, AY ;
Rossler, U .
PHYSICAL REVIEW B, 1996, 54 (08) :5852-5859
[7]   SPECTRAL CHARACTERIZATION OF THE LINEAR AND QUADRATIC ELECTROOPTIC EFFECTS IN GAAS/ALGAAS MULTIPLE QUANTUM-WELL WAVE-GUIDES [J].
JENNINGS, A ;
WILKINSON, CDW ;
ROBERTS, JS .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) :60-65
[8]   Investigations of giant 'forbidden' optical anisotropy in GaInAs-InP quantum well structures [J].
Krebs, O ;
Seidel, W ;
Andre, JP ;
Bertho, D ;
Jouanin, C ;
Voisin, P .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (07) :938-942
[9]   Inversion asymmetry in heterostructures of zinc-blende semiconductors: Interface and external potential versus bulk effects [J].
Krebs, O ;
Rondi, D ;
Gentner, JL ;
Goldstein, L ;
Voisin, P .
PHYSICAL REVIEW LETTERS, 1998, 80 (26) :5770-5773
[10]   GIANT ELECTROPLEOCHROISM IN GAAS-(AL,GA) AS HETEROSTRUCTURES - THE QUANTUM-WELL POCKELS EFFECT [J].
KWOK, SH ;
GRAHN, HT ;
PLOOG, K ;
MERLIN, R .
PHYSICAL REVIEW LETTERS, 1992, 69 (06) :973-976
123