Femtosecond Laser Assisted Multi-Ion Implantation in Dielectrics

被引:0
|
作者
Jose, Gin [1 ]
Fernandez, T. Toney [1 ]
Steenson, Paul [2 ]
Jha, A. [1 ]
机构
[1] Univ Leeds, Sch Proc Environm & Mat Engn, Inst Mat Res, Leeds LS2 9JT, W Yorkshire, England
[2] Univ Leeds, Sch Elect & Elect Engn, Inst Microwaves & Photon, Leeds LS2 9JT, W Yorkshire, England
来源
2012 14TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2012) | 2012年
关键词
ion implantation; pulse laser deposition; rare earth; femtosecond laser;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report the simultaneous implantation of metal ions namely Te4+, Zn2+ and Na+ along with the rare-earth ion Er3+ using a femtosecond laser ablation and deposition process. Planar waveguide structures with 1.3 mu m deep uniform diffusion with a maximum refractive index change (Delta n(max)) of 0.169 was produced in silica. This novel process will be explained using existing models with experimental verification. It has a potential to produce new materials and structures which are otherwise impossible to achieve via conventional glass and thin-film fabrication techniques. The unique possibility of diffusing rare earth ions opens new realm of photonic devices engineering.
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页数:2
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