Synthesis of nitrogen-doped graphene from ployacrylonitrile

被引：8

作者：

Gao, Hui ^{[1
]}

Guo, Lei ^{[2
]}

Wang, Lanxi ^{[2
]}

Wang, Yunfei ^{[2
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China

[2] Lanzhou Inst Phys, Sci & Technol Surface Engn Lab, Lanzhou 730000, Peoples R China

来源：

MATERIALS LETTERS | 2013年 / 109卷

关键词：

Carbon materials; XPS; Polymers;

D O I：

10.1016/j.matlet.2013.07.071

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Doping graphene with nitrogen (N) could effectively tailor its electronic properties as well as the chemical reactivity for advanced device applications. Herein, we developed a novel and facile method for direct synthesis of N-doped graphene (NG) sheets via a thermal conversion of polyacrylonitrile (PAN) thin film. The newly-produced NG sheets in large area are uniform and predominantly single layer (>90%) with a nitrogen/carbon atomic ratio of ca. 2.7%. The sheets could be transferred to arbitrary substrates without using polymethyl methacrylate (PMMA) as the supporting layer. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：182 / 185

页数：4

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