10 Gbps silicon waveguide-integrated infrared avalanche photodiode

被引：37

作者：

Ackert, Jason J. ^{[1
]}

Karar, Abdullah S. ^{[2
]}

Paez, Dixon J. ^{[1
]}

Jessop, Paul E. ^{[3
]}

Cartledge, John C. ^{[2
]}

Knights, Andrew P. ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

[2] Queens Univ, Dept Elect & Comp Engn, Kingston, ON K7L 3N6, Canada

[3] Wilfrid Laurier Univ, Dept Phys & Comp Sci, Waterloo, ON N2L 3C5, Canada

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 17期

基金：

加拿大自然科学与工程研究理事会;

关键词：

PHOTODETECTOR;

D O I：

10.1364/OE.21.019530

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have fabricated monolithic silicon avalanche photodiodes capable of 10 Gbps operation at a wavelength of 1550 nm. The photodiodes are entirely CMOS process compatible and comprise a p-i-n junction integrated with a silicon-on-insulator (SOI) rib waveguide. Photo-generation is initiated via the presence of deep levels in the silicon bandgap, introduced by ion implantation and modified by subsequent annealing. The devices show a small signal 3 dB bandwidth of 2.0 GHz as well as an open eye pattern at 10 Gbps. A responsivity of 4.7 +/- 0.5 A/W is measured for a 600 mu m device at a reverse bias of 40 V. (C) 2013 Optical Society of America

引用

页码：19530 / 19537

页数：8

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