Study of Ga+ implantation in Si diodes: effect on optoelectronic properties using micro-spectroscopy

被引：4
作者：
Deshpande, Preeti [1 ]
Vilayurganapathy, Subramanian [4 ]
Bhat, K. N. [1 ]
Ghosh, Ambarish [1 ,2 ,3 ]
机构：
[1] Indian Inst Sci, Ctr Nano Sci & Engn, Bengaluru, Karnataka, India
[2] Indian Inst Sci, Dept Phys, Bengaluru, Karnataka, India
[3] Indian Inst Sci, Elect Commun Engn, Bengaluru, Karnataka, India
[4] Raman Res Inst, Bengaluru, Karnataka, India
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2019年 / 125卷 / 03期
关键词：
FOCUSED ION-BEAM;
D O I：
10.1007/s00339-019-2467-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion implantation has been widely used in various device fabrication applications, including that of optoelectronic components. Focused Ion Beam (FIB) is an especially versatile implantation method, since it can be used for well controlled doping with sub-micron spatial precision. Here, we report FIB induced gallium doping in micrometer-sized regions on shallow Silicon p-n junction devices and its effect on the device optoelectronic properties investigated through micro-spectroscopic measurements. The effect of varying dose levels has been quantified in terms of photo voltage, Raman spectroscopy, XPS and reflectance measurements to investigate the effect of radiation damage and surface amorphization. Based on these observations we report simultaneous occurrence of two scenarios, channeling of high-energy gallium ions beyond the junction depth, as well as formation of an amorphous silicon layer, which cumulatively degrade the optoelectronic properties of the diodes.
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页数：6
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