W-band 90nm CMOS LNA Design

被引：0
|
作者：
Liao, Chien-Hsiung [1 ]
Hsieh, Cheng-Huang [1 ]
Hu, Robert [1 ]
Niu, Dow-Chih [1 ]
Shiao, Yu-Shao [1 ]
机构：
[1] MediaTek, Hsinchu, Taiwan
来源：
2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012) | 2012年
关键词：
W-band; millimeter-wave; low noise amplifier; LNA; GAIN;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
This manuscript describes our W-band LNA design using commercial 90nm CMOS process. For effectively extending the amplifier's bandwidth without compromising its wideband matching or noise figure, a combination of common-source and cascode gain stages are employed for the five-stage circuit design. This 1200x900 mu m(2) low-noise amplifier has more than 10dB gain and around 12dB noise figure, with 41mW power consumption. Though primarily developed for our receiver array, this W-band LNA does find applications in areas such as image sensing, surveillance, radar, and millimeter-wave instrumentations. With consistent simulated and measured results, this circuit can be modified for covering even wider bandwidth whenever needed.
引用
收藏
页码：430 / 432
页数：3
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