W-band 90nm CMOS LNA Design

被引：0

作者：

Liao, Chien-Hsiung ^{[1
]}

Hsieh, Cheng-Huang ^{[1
]}

Hu, Robert ^{[1
]}

Niu, Dow-Chih ^{[1
]}

Shiao, Yu-Shao ^{[1
]}

机构：

[1] MediaTek, Hsinchu, Taiwan

来源：

2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012) | 2012年

关键词：

W-band; millimeter-wave; low noise amplifier; LNA; GAIN;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

This manuscript describes our W-band LNA design using commercial 90nm CMOS process. For effectively extending the amplifier's bandwidth without compromising its wideband matching or noise figure, a combination of common-source and cascode gain stages are employed for the five-stage circuit design. This 1200x900 mu m(2) low-noise amplifier has more than 10dB gain and around 12dB noise figure, with 41mW power consumption. Though primarily developed for our receiver array, this W-band LNA does find applications in areas such as image sensing, surveillance, radar, and millimeter-wave instrumentations. With consistent simulated and measured results, this circuit can be modified for covering even wider bandwidth whenever needed.

引用

页码：430 / 432

页数：3

共 50 条

[31] A Novel Soft Error Hardened Latch Design in 90nm CMOS
Shirinzadeh, Saeideh
Asli, Rahebeh Niaraki
2012 16TH CSI INTERNATIONAL SYMPOSIUM ON COMPUTER ARCHITECTURE AND DIGITAL SYSTEMS (CADS), 2012, : 60 - 63
[32] Design of a Three Stage Operational Transconductance Amplifier in 90nm CMOS
Usman, Muhammad
Haseeb, Muhammad
Chaudhry, Shabbir Majeed
2018 12TH INTERNATIONAL CONFERENCE ON MATHEMATICS, ACTUARIAL SCIENCE, COMPUTER SCIENCE AND STATISTICS (MACS), 2018,
[33] W-Band Broadband CMOS LNA Using Partially Coupled Transformer and Large Transistor
Song, Jae-Hyeok
Choi, Han-Woong
Lim, Jeong-Taek
Kim, Choul-Young
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2025, 35 (01): : 83 - 86
[34] Reliability Study of the 90nm CMOS Inverter
Hadi, Dayanasari Abdul
Soin, Norhayati
Hatta, S. F. Wan Muhamad
ENABLING SCIENCE AND NANOTECHNOLOGY, 2011, 1341 : 181 - 184
[35] A Passive W-Band Imager in 65nm Bulk CMOS
Tomkins, A.
Garcia, P.
Voinigescu, S. P.
2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009, 2009, : 91 - +
[36] 65-nm CMOS, W-band receivers for imaging applications
Tang, K. W.
Khanpour, M.
Garcia, P.
Garnier, C.
Voinigescu, S. P.
PROCEEDINGS OF THE IEEE 2007 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2007, : 749 - +
[37] A 64GHz 6.5 dB NF 15.5 dB gain LNA in 90nm CMOS
Pellerano, Stefano
Palaskas, Yorgos
Soumyanath, Krishnamurthy
ESSCIRC 2007: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2007, : 352 - 355
[38] Product reliability in 90nm CMOS and beyond
Turner, AA
2005 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, FINAL REPORT, 2005, : 163 - 167
[39] An illustration of 90nm CMOS layout on PC
Sicard, E
Ben Dhia, S
ICCDCS 2004: Fifth International Caracas Conference on Devices, Circuits and Systems, 2004, : 315 - 318
[40] W-Band power amplifier with high output power and power-added efficiency in 90 nm CMOS
Yo-Sheng Lin
Kai-Siang Lan
Analog Integrated Circuits and Signal Processing, 2019, 100 : 31 - 46

← 1 2 3 4 5 →