W-band 90nm CMOS LNA Design

被引：0

作者：

Liao, Chien-Hsiung ^{[1
]}

Hsieh, Cheng-Huang ^{[1
]}

Hu, Robert ^{[1
]}

Niu, Dow-Chih ^{[1
]}

Shiao, Yu-Shao ^{[1
]}

机构：

[1] MediaTek, Hsinchu, Taiwan

来源：

2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012) | 2012年

关键词：

W-band; millimeter-wave; low noise amplifier; LNA; GAIN;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

This manuscript describes our W-band LNA design using commercial 90nm CMOS process. For effectively extending the amplifier's bandwidth without compromising its wideband matching or noise figure, a combination of common-source and cascode gain stages are employed for the five-stage circuit design. This 1200x900 mu m(2) low-noise amplifier has more than 10dB gain and around 12dB noise figure, with 41mW power consumption. Though primarily developed for our receiver array, this W-band LNA does find applications in areas such as image sensing, surveillance, radar, and millimeter-wave instrumentations. With consistent simulated and measured results, this circuit can be modified for covering even wider bandwidth whenever needed.

引用

页码：430 / 432

页数：3

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