Weak localization and antilocalization in topological insulator thin films with coherent bulk-surface coupling

被引：151

作者：

Garate, Ion ^{[1
]}

Glazman, Leonid ^{[1
]}

机构：

[1] Yale Univ, Dept Phys, New Haven, CT 06520 USA

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 03期

基金：

美国国家科学基金会;

关键词：

PHASE-TRANSITION; BI2SE3;

D O I：

10.1103/PhysRevB.86.035422

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional topological insulator. We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case.

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页数：17

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