Room temperature imprint behavior of the Pb(Zr,Ti)O3 thin films

被引：0

作者：

Yang, CT ^{[1
]}

Zhang, SR ^{[1
]}

Chen, FG ^{[1
]}

Liu, JS ^{[1
]}

Tian, ZM ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2005年 / 75卷

关键词：

imprint; interface layer; defect; PZT;

D O I：

10.1080/10584580500414416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Imprint is an important effect of the failure mechanisms in ferroelectric memory devices. After the analysis of the forming mechanism of the interface layer between the ferroelectric film and the electrode, the basic idea we employ that the imprint was induced by the different defect's distribution which existed at grain boundaries and t the interface. The difference of the defect's distribution was induced by different thickness of the interface layer. The thickness dependence of coercive voltage shift and coercive voltage change rule with time validates our assumption.

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收藏

页码：181 / 187

页数：7

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