Investigation of Silicon-Germanium Metal-Oxide-Semiconductor Field-Effect Transistors grown by Laser-assisted Plasma-enhanced Chemical Vapor Deposition

被引：0
|
作者：
Lee, Ching-Ting [1 ]
Lin, Jian-Gang [1 ]
Lee, Hsin-Ying [2 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Opt Engn, Tainan, Taiwan
来源：
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2008年
关键词：
SiGe thin film; metal-oxide-semiconductor field-effect transistors; laser-assisted plasma enhanced chemical vapor deposition;
D O I：
10.1109/GROUP4.2008.4638131
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.
引用
收藏
页码：161 / 163
页数：3
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