Inkjet printed high-mobility indium zinc tin oxide thin film transistors

被引：135

作者：

Lee, Doo-Hyoung ^{[1
,2
]}

Han, Seung-Yeol ^{[1
]}

Herman, Gregory S. ^{[3
]}

Chang, Chih-Hung ^{[1
]}

机构：

[1] Oregon State Univ, Dept Chem Engn, Corvallis, OR 97330 USA

[2] Yeungnam Univ, Sch Display & Chem Engn, Kyongsan 2141, South Korea

[3] Hewlett Packard Corp, Corvallis, OR 97330 USA

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2009年 / 19卷 / 20期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTORS; CIRCUITS;

D O I：

10.1039/b822893k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin-film transistors based on inkjet printed indium zinc tin oxide (IZTO) channel layers are reported in this paper. The printed IZTO transistor has a high field-effect mobility (mu(FE) = similar to 30 cm(2) V-1 s(-1)), excellent on-to-off current ratio (> 1 x 10(6)) and behaves as an enhancement mode device (turn-on voltage 2 V). This mobility is an order magnitude higher than previously reported for inkjet printed oxide-based transistors. The printed films are highly transparent in the UV-Visible regime with a transmittance higher than 95%. A transparent thin film transistor using a printed IZTO channel was also demonstrated for the first time.

引用

页码：3135 / 3137

页数：3

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