Structural and Optical Properties of High Bi Content GaSbBi Films Grown by Molecular Beam Epitaxy

被引：0

作者：

Yue, Li ^{[1
]}

Zhang, Yanchao ^{[1
]}

Zhang, Fan ^{[1
]}

Wang, Lijuan ^{[1
]}

Zhuzhong, Yunshen ^{[1
]}

Liu, Juanjuan ^{[1
]}

Wang, Shumin ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China

[2] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

来源：

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年

关键词：

GaSbBi; dilute bismide; molecular beam epitaxy; photoluminescence;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaSb1-xBix thin films with 0 <= x <= 13% were grown by molecular beam epitaxy. The Bi content, lattice expansion and crystal structure were investigated by Rutherford backscattering spectroscopy, X-ray diffraction and transmission electron microscopy. Photoluminescence spectra of the GaSb1-xBix alloys with various Bi contents were studied at 77 K. The bandgap energy of GaSb1-xBix is decreased effectively as Bi content increasing. The PL peak energy of the 13% Bi content GaSb1-xBix is extended to 2.43 mu m, indicating that GaSb1-xBix alloys has potentials in mid-infrared applications.

引用

页数：2

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